Prikaz osnovnih podataka o dokumentu

dc.contributor.authorKevkić, Tijana S.
dc.contributor.authorNikolić, Vojkan R.
dc.contributor.authorStojanović, Vladica S.
dc.contributor.authorMilosavljević, Dragana D.
dc.contributor.authorJovanović, Slavica J.
dc.date.accessioned2023-03-08T12:20:05Z
dc.date.available2023-03-08T12:20:05Z
dc.date.issued2022-01-26
dc.identifier.citationAuthors thank the Ministry of Education, Science and Technological Development of the Republic of Serbia for support under Contract No. 451-03-9/2021-14en_US
dc.identifier.citationFaculty of Sciences and Mathematics in Kosovska Mitrovica (University of Priština in Kosovska Mitrovica, Department of Physics) for support under the project ИЈ-0201en_US
dc.identifier.urihttps://platon.pr.ac.rs/handle/123456789/1093
dc.description.abstractModeling of the electrostatic potential for fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented in this article. The modeling is based on the analytical solution of two-dimensional Poisson’s equation obtained by using the homotopy perturbation method (HPM). The HPM with suitable boundary conditions results in the so-called HPM solution in general and closed-form, independent of the surface potential. The HPM solution has been applied in modeling the output characteristics of the FDSOI MOSFET, which show good agreement compared with the numerical results.en_US
dc.language.isoen_USen_US
dc.publisherDe Gruyteren_US
dc.titleModeling electrostatic potential in FDSOI MOSFETS: An approach based on homotopy perturbationsen_US
dc.title.alternativeOpen Physicsen_US
dc.typeclanak-u-casopisuen_US
dc.description.versionpublishedVersionen_US
dc.identifier.doihttps://doi.org/10.1515/phys-2022-0012
dc.citation.volume20
dc.citation.issue1
dc.citation.spage106
dc.citation.epage116
dc.subject.keywords2D Poisson equationen_US
dc.subject.keywordselectrostatic potentialen_US
dc.subject.keywordsFDSOI MOSFETsen_US
dc.subject.keywordsHPMen_US
dc.subject.keywordssurface potentialen_US
dc.type.mCategoryM23en_US
dc.type.mCategoryopenAccessen_US
dc.type.mCategoryM23en_US
dc.type.mCategoryopenAccessen_US


Dokumenti

Thumbnail

Ovaj rad se pojavljuje u sledećim kolekcijama

Prikaz osnovnih podataka o dokumentu