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Modeling electrostatic potential in FDSOI MOSFETS: An approach based on homotopy perturbations

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10.1515_phys-2022-0012 - Dragana Todorovic.pdf (72.20Kb)
Date
2022-01-26
Authors
Kevkić, Tijana S.
Nikolić, Vojkan R.
Stojanović, Vladica S.
Milosavljević, Dragana D.
Jovanović, Slavica J.
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Abstract
Modeling of the electrostatic potential for fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented in this article. The modeling is based on the analytical solution of two-dimensional Poisson’s equation obtained by using the homotopy perturbation method (HPM). The HPM with suitable boundary conditions results in the so-called HPM solution in general and closed-form, independent of the surface potential. The HPM solution has been applied in modeling the output characteristics of the FDSOI MOSFET, which show good agreement compared with the numerical results.
URI
https://platon.pr.ac.rs/handle/123456789/1093
DOI
https://doi.org/10.1515/phys-2022-0012
M category
M23
openAccess
M23
openAccess
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