dc.contributor.author | Kevkić, Tijana S. | |
dc.contributor.author | Nikolić, Vojkan R. | |
dc.contributor.author | Stojanović, Vladica S. | |
dc.contributor.author | Milosavljević, Dragana D. | |
dc.contributor.author | Jovanović, Slavica J. | |
dc.date.accessioned | 2023-03-08T12:20:05Z | |
dc.date.available | 2023-03-08T12:20:05Z | |
dc.date.issued | 2022-01-26 | |
dc.identifier.citation | Authors thank the Ministry of Education, Science and Technological Development of the Republic of Serbia for support under Contract No. 451-03-9/2021-14 | en_US |
dc.identifier.citation | Faculty of Sciences and Mathematics in Kosovska Mitrovica (University of Priština in Kosovska Mitrovica, Department of Physics) for support under the project ИЈ-0201 | en_US |
dc.identifier.uri | https://platon.pr.ac.rs/handle/123456789/1093 | |
dc.description.abstract | Modeling of the electrostatic potential for fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented in this article. The modeling is based on the analytical solution of two-dimensional Poisson’s equation obtained by using the homotopy perturbation method (HPM). The HPM with suitable boundary conditions results in the so-called HPM solution in general and closed-form, independent of the surface potential. The HPM solution has been applied in modeling the output characteristics of the FDSOI MOSFET, which show good agreement compared with the numerical results. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | De Gruyter | en_US |
dc.title | Modeling electrostatic potential in FDSOI MOSFETS: An approach based on homotopy perturbations | en_US |
dc.title.alternative | Open Physics | en_US |
dc.type | clanak-u-casopisu | en_US |
dc.description.version | publishedVersion | en_US |
dc.identifier.doi | https://doi.org/10.1515/phys-2022-0012 | |
dc.citation.volume | 20 | |
dc.citation.issue | 1 | |
dc.citation.spage | 106 | |
dc.citation.epage | 116 | |
dc.subject.keywords | 2D Poisson equation | en_US |
dc.subject.keywords | electrostatic potential | en_US |
dc.subject.keywords | FDSOI MOSFETs | en_US |
dc.subject.keywords | HPM | en_US |
dc.subject.keywords | surface potential | en_US |
dc.type.mCategory | M23 | en_US |
dc.type.mCategory | openAccess | en_US |
dc.type.mCategory | M23 | en_US |
dc.type.mCategory | openAccess | en_US |